Semiconductor devices comprising interconnect structures and methods of fabrication

ABSTRACT

Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.14/191,086, filed Feb. 26, 2014, now U.S. Pat. No. 9,111,932, issuedAug. 18, 2015, which is a continuation of U.S. patent application Ser.No. 13/085,122, filed Apr. 12, 2011, now U.S. Pat. No. 8,664,112, issuedMar. 4, 2014, which is a divisional of U.S. patent application Ser. No.12/174,393, filed Jul. 16, 2008, now U.S. Pat. No. 7,928,577, issuedApr. 19, 2011, the disclosure of each of which is hereby incorporated inits entirety herein by this reference.

TECHNICAL FIELD

This invention, in various embodiments, relates generally tosemiconductor devices, such as memory devices, and particularly tointerconnect structures for semiconductor devices and methods of formingsuch interconnect structures.

BACKGROUND

Integrated circuit (IC) devices are used in nearly all areas of modernelectronics. As integrated circuit devices become more complex, e.g.,including greater numbers of circuits, minimizing the size of theintegrated circuit device packages becomes increasingly morechallenging. One conventional solution to providing increased densitywith decreased package size has been to stack layers of integratedcircuits forming multi-layered or three-dimensional structures. Onecommon application for such a structure is found in conventional memorydevices in which two or more layers of memory arrays are fabricated in astack to form a multi-layered or three-dimensional memory arraystructure.

Typically, multiple layers in the three-dimensional structure have atleast some interconnecting structures to electrically interconnect theindividual layers. For example, in the memory array case, the multiplelayers of memory arrays are conventionally integrated with controllingcircuitry in a base layer of the memory device by forming a plurality ofinterconnect structures electrically connecting the multiple layers ofmemory to the controlling circuitry. In another example, conventionalintegrated circuit layers will typically all require power and groundconnections, which can be provided by a single, interconnect structureextending through each of the integrated circuit layers.

In order to ensure adequate electrical connection, conventionalinterconnect structures require a relatively large cross-section, which,in turn, requires more lateral space or “real estate” on a semiconductordie. The need for real estate in order to provide such electricalinterconnections may reduce the ability to maximize the density of theintegrated circuit in order to obtain the greatest functionality in thesmallest package size. When the transverse cross-sectional dimension ofthe electrical interconnections is reduced to make the electricalinterconnections smaller, the contact area is also reduced. Thisdecrease in contact area results in an increase in the contactresistance. Thus, the configuration of the interconnect structures for adevice incorporating multiple layers or arrays can be a significantconsideration in package design to minimize package size, enhance memorydensity, or both.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exploded view of a portion of a three-dimensionalelectronic device according to an embodiment of the present invention;

FIG. 2 is a partial cross-sectioned view of a stacked IC devicecomprising a plurality of IC layers including memory arrays;

FIG. 3 shows a partial cross-sectioned view of a stacked IC deviceaccording to one embodiment comprising a memory device;

FIG. 4 is a partial cross-sectioned view of an embodiment of the memorydevice of FIG. 3 further comprising an aperture formed therein;

FIG. 5 illustrates a partial cross-sectioned view of one embodiment ofthe memory device of FIG. 4 comprising contact ends recessed from asidewall of the aperture;

FIG. 6 illustrates a partial cross-sectioned view of one embodiment ofthe memory device of FIG. 4 in which the contact ends overhang thesidewall of the aperture;

FIG. 7 is a schematic of a memory card containing a plurality ofsemiconductor memory devices containing at least one interconnectstructure according to one embodiment of the invention; and

FIG. 8 is a schematic of a computing system diagram showing at least onesemiconductor memory device containing at least one interconnectstructure according to one embodiment of the invention.

DETAILED DESCRIPTION

The illustrations presented herein are, in some instances, not actualviews of any particular semiconductor device or interconnect structure,but are merely idealized representations, which are employed to describethe present invention. Additionally, elements common between figures mayretain the same numerical designation.

Referring to FIG. 1, an exploded view of a portion of athree-dimensional electronic device 100, also referred to herein as astacked integrated circuit (IC) device, is shown according to anembodiment of the present invention. The stacked IC device 100 maycomprise a stack of integrated circuit (IC) layers 105. The IC layers105 may be formed by conventional methods as are well known to those ofordinary skill in the art. Furthermore, if formed separately, theindividual IC layers 105 may be stacked by conventional methods. Two ormore IC layers 105 may be interconnected by one or more interconnectstructures extending between and electrically connecting the IC layers105, as described in more detail herein below. By way of example and notlimitation, the stacked IC device 100 may comprise any one of a memorydevice, an imager device, an integrated processor/memory device, ananalog device, a sensor array, a MEMS (Micro-Electro-Mechanical System)device, etc.

In some embodiments, the stacked IC device 100 may comprise a memorydevice in which at least some of the IC layers 105 comprise memoryarrays. FIG. 2 is a partial cross-sectional view of a stacked IC device100 configured as a memory device comprising a plurality of IC layers105 including memory arrays 110. Each IC layer 105 may comprise one ormore memory arrays 110. By way of example only, the memory device maycomprise between nine and thirty-two memory array circuit layers, butthere is no particular limit to the number of layers. Conventionalmemory array circuit layers may comprise a plurality of memory cells,busing electrodes, and enabling gates for selection of specific rows orcolumns of the memory array. The one or more memory arrays 110 areelectrically connected to conductive pathways, which may be configuredas conductive traces 115. By way of example and not limitation, theconductive traces 115 may provide electrical connections to I/O powerand ground or bias bus lines, memory circuit layer selects, memory macrocell column selects, data lines, gate-line multiplexer selects, etc. Thebase IC layer 105 of the memory device may comprise circuitry forcontrolling the memory arrays 110. The controller circuitry may compriseconventional CMOS (complementary metal-oxide-semiconductor) circuitryincluding sense amps, address, control and drive logic, etc.

The stacked IC device 100 may further include one or more interconnectstructures 120 coupled at a connecting point with one or more conductivetraces 115 in each IC layer 105. The interconnect structures 120 may,therefore, provide mutual electrical interconnection between a pluralityof IC layers 105, as well as between one or more IC layers 105 and thecontroller circuitry. By way of example and not limitation, the ICdevice 100 in FIG. 2 may comprise interconnect structures 120 to provideelectrical connection to a ground plane in each IC layer 105. Theinterconnect structures 120 may comprise an aperture extending through aportion of one or more of the connecting points of the conductive traces115, as well as a portion of an insulative material 130 mutuallyelectrically isolating the circuitry of the multiple IC layers 105. Theaperture may be at least partially filled (e.g., at least partiallylined) with a conductive material, such as copper. The interconnectstructures 120 are configured such that the cross-sectional dimension ofthe interconnect structures 120, through the connecting points, differsfrom the cross-sectional dimension through the adjacent insulativematerial 130.

In one embodiment, as illustrated by the interconnect structure 120 onthe left in FIG. 2, the interconnect structure 120 may comprise atransverse cross-sectional dimension D1 through the connecting points ofthe one or more conductive traces 115 that is larger than the transversecross-sectional dimension D2 of the interconnect structure 120 throughthe adjacent insulative material 130. In such embodiments, the contactend 135 of the connecting points of the conductive traces 115 arerecessed into the insulative material 130 or, in other words, into thesidewall 140 of the interconnect structure 120.

In another embodiment illustrated by the interconnect structure 120 onthe right in FIG. 2, the transverse cross-sectional dimension D1 of theinterconnect structure 120, through the connecting points of theconductive traces 115, is smaller than the transverse cross-sectionaldimension D2 through the adjacent insulative material 130. Thus, thecontact ends 135 of the connecting points extend inward beyond thesidewall 140 of the interconnect structure 120 into the interconnectstructure 120 itself. In other words, the connecting points overhang thesidewall 140 of the insulative material 130, exposing a portion of a topsurface 145 and a bottom surface 150 of each of the connecting points ofthe conductive traces 115.

FIG. 3 shows a partial cross-sectioned view of a stacked IC device 100according to one embodiment comprising a memory device. The stacked ICdevice 100 configured as a memory device may be formed by forming aplurality of IC layers 105 (FIG. 1) vertically stacked in athree-dimensional fashion. The layers may be formed and stackedaccording to methods known to those of ordinary skill in the art. By wayof example, the lowermost IC layer 105 may be fabricated with circuitsby conventional methods, e.g., bulk silicon substrate or a siliconsurface layer of a silicon on insulator (SOI) wafer. Then, the next IClayer 105 may be formed on the base wafer. By way of example and notlimitation, any subsequent IC layer 105 may be formed on a previous IClayer 105 by epitaxial silicon (epi Si) growth, recrystallization ofamorphous silicon, wafer bonding, etc. Device processing may becompleted on that subsequent IC layer 105, which, in the case of amemory device, may include forming memory arrays 110, as well asconductive traces 115 patterned thereon. In some embodiments, theconductive traces 115 may comprise a conductive metal material such asW, Cu, WSi_(x), etc., or the conductive traces 115 may comprise a dopedsilicon, such as silicon doped with P, B, As, C, etc., or combinationsthereof. Such processes of adding IC layers 105 may be repeated untilthe desired number of IC layers 105 are formed. In many cases, theseprocessing acts, as well as the subsequently described processing acts,are carried out at temperatures below about 400° C. so as to avoidpossible detrimental phase changes in the device materials, which maycause the device to fail and/or to avoid grain growth on conductivetraces, etc.

As the IC layers 105 are formed, insulative material 130 is disposedbetween each IC layer 105 to electrically isolate the circuits on eachIC layer 105 from those of other IC layers 105. By way of example andnot limitation, the insulative material 130 may comprise a dielectricmaterial such as silicon dioxide (SiO₂), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), etc., and may be formed byconventional methods.

After the stacked IC device 100 is formed, one or more apertures 155 areformed therein, as shown in FIG. 4. The one or more apertures 155 mayeach comprise a relatively small transverse cross-sectional dimension,so as to reduce the amount of chip area used in the stacked IC device100 and, in turn, may aid in reducing the size of the stacked IC device100. In some embodiments, each of the one or more apertures 155 maycomprise a nominal transverse cross-sectional dimension of less than orequal to about 500 nm. To form the apertures 155 with such a relativelysmall transverse cross-sectional dimension, a conventional reactive ionetching process may be employed. The one or more apertures 155 may beformed to extend through at least one conductive trace 115 and throughat least one portion of the insulative material 130 adjacent the atleast one conductive trace 115. As shown in FIG. 4, the aperture 155 maybe formed to extend through a portion of each IC layer 105, including aconnecting point of each conductive trace 115, as well as through theinsulative material 130 adjacent to each connecting point. Thetransverse cross-sectional dimension of the aperture 155 may be at leastsubstantially constant through each IC layer 105 or the aperture 155 maycomprise a slight taper such that the lower portion of the aperture 155has a slightly smaller transverse cross-sectional dimension than theupper portion of the aperture 155. Such a taper may be a result of theprocess used to form the aperture 155, causing the contact area near thebottom of the aperture 155 to be smaller compared to the contact areanear the top of the aperture 155.

The relatively small transverse cross-sectional dimension of theaperture 155 may result in a relatively small exposed surface area atthe contact end 135 of the connecting points of the conductive traces115. Additional processing steps may, therefore, be employed to increasethe exposed surface area of the contact ends 135. In some embodiments,such as that shown in FIG. 5, each contact end 135 of the connectingpoints may be recessed from the sidewall 140 of the aperture 155, whilein other embodiments, such as that shown in FIG. 6, each contact end 135of the connecting points may overhang the sidewall 140.

Referring to FIG. 5, after forming the initial aperture 155 thetransverse cross-sectional dimension D1 at the contact end 135 may beincreased by selectively removing a portion of the contact end 135. Inat least some embodiments, the portion of the contact end 135 may beremoved by employing an etchant configured to selectively etch portionsof the contact end 135 without substantially removing portions of theinsulative material 130. A conventional wet or dry etching process maybe employed in which the etchant is selected to selectively etch thecontact ends 135 of the conductive traces 115. As described above, insome embodiments the conductive traces 115 may comprise a doped silicon.By way of example and not limitation, a suitable etchant for selectivelyetching the doped silicon in a conventional reactive ion etching processmay comprise HBr/Cl₂/O₂. A wide range of ratios may be employed, buttypically the volume of HBr is less than the volume of O₂ and the volumeof O₂ is less than the volume of Cl₂. Furthermore, if there is arelatively high Ar content in the doped silicon, approximately 5% of SF₆may be added to the etchant.

The depth of the recesses may be determined according to the desiredincrease in the exposed surface area of the contact end 135. Theincrease in exposed surface area is dependent on the thickness of theconductive traces 115 at the contact ends 135 and the original diameterof the aperture 155, as illustrated by way of a non-limiting example inthe following Tables 1 and 2 and described herein below. By way ofexample and not limitation, the thickness between the top surface 161and the bottom surface 163 of the conductive traces 115, as oriented inFIG. 5, may be from about 100 nanometers (nm) to about 500 nm. By way ofexample and not limitation and referring to Table 1 below, in anembodiment in which the conductive traces 115 are approximately 500 nmthick and the original diameter of the aperture 155 is approximately 300nm, a recessed diameter D1 of 310 nm results in a percent increase intotal contact area of about 3.33%. Similarly, a recessed diameter D1 of330 nm results in a percent increase of about 10%, and a recesseddiameter D1 of 350 nm results in a percent increase of about 16.7%. Inany of these embodiments, the transverse cross-sectional dimension ofthe aperture 155, excluding the portions wherein conductive tracematerial has been removed, remains at least substantially unchanged.

TABLE 1 Vertical Percent Dielectric Doped Si Thickness Contact ChangeDiameter Diameter of Si layer area from (nm) (nm) (nm) (nm²) nominal 300300 500 471,239 300 310 500 486,947 3.33 300 330 500 518,363 10.0 300350 500 549,779 16.7

In conventional integrated circuit devices, a similar change in totalcontact area may be accomplished by similarly increasing the diameterD1, such as from 300 nm to 350 nm to achieve a percent increase of 16.7%as shown in Table 2 below. However, in such conventional devices theentire aperture was increased in size, thereby increasing a requiredsize of a die for a given IC capacity by reducing the ability to achievehigher levels of IC density. By employing embodiments as described, arelatively small aperture may be employed in order to increase the ICdensity, and reduce the size for a given density, of the integratedcircuit, while still providing adequate surface area at the contact ends135.

TABLE 2 Vertical Percent Dielectric Doped Si Thickness Contact ChangeDiameter Diameter of Si layer area from (nm) (nm) (nm) (nm²) nominal 300300 500 471,239 310 310 500 486,947 3.33 330 330 500 518,363 10.0 350350 500 549,779 16.7

A conductive material may subsequently be disposed within the aperture155. In some embodiments, the aperture 155 may be filled with aconductive material such as W, Cu, Al, Pd, Co, Ru, Ni, Pt, etc. Theconductive material may be disposed by conventional methods such aselectroless plating. Depending on the material composition of theconductive material (e.g., Cu), an optional seed layer may be formedprior to disposing the material in the aperture 155. Some non-limitingexamples of suitable seed layer material may include Cu, Ru, etc. Theseed layer may be disposed by conventional means, such as Atomic LayerDeposition (ALD) or electroless plating. Furthermore, for someconductive materials (e.g., Cu), a barrier layer may also be formed inthe aperture 155 prior to forming the seed layer. Non-limiting examplesof suitable barrier film materials include TiN, TaN, etc. The barrierlayer may be formed by disposing a suitable material by conventionalmethods, such as ALD. In some embodiments, prior to disposing theconductive material in the aperture 155, and prior to forming theoptional barrier layer and seed layer, a silicide may be formed over theexposed contact ends 135.

By way of an example, and not limitation, in some embodiments in whichthe conductive traces 115 comprise a doped silicon, a silicide may beformed on the exposed contact ends 135 by disposing Ni thereon. The Nimay be disposed by conventional means, such as by ALD. The Ni may reactwith the silicon at temperatures lower than 400° C. to form NiSi_(x),which may improve conductive properties between the conductive materialin the aperture 155 and the conductive traces 115. If a conductivematerial such as Cu is being employed to fill the aperture 155, abarrier layer may be formed by ALD, followed by a seed layer. If theconductive material comprises another material such as Pd, theconductive material may be disposed within the aperture 155 without abarrier layer or a seed layer. The conductive material may be disposedby electroless deposition to fill the aperture 155 and electricallycouple the interconnect structure 120 to the exposed contact end 135.Top level common routing or conductive traces 125 (FIG. 2) may also beformed on the upper surface of the stacked IC device 100 andelectrically coupled to at least some of the interconnect structures120.

Referring to FIG. 6, in some embodiments of the interconnect structure120, the contact ends 135 of the connecting points may overhang thesidewall 140 of aperture 155. After forming the initial aperture 155 asdescribed with relation to FIG. 4, the transverse cross-sectionaldimension D2, through the insulative material 130, may be increased byselectively removing a portion of the insulative material 130. In atleast some embodiments, the portion of the insulative material 130 maybe removed by employing an etchant configured to selectively etchportions of the insulative material 130 without substantially removingportions of the contact ends 135. A conventional wet or dry etchingprocess may be employed in which the etchant is selected to selectivelyetch the insulative material 130. As described above, in someembodiments the insulative material 130 may comprise an insulative oxidesuch as silicon dioxide (SiO₂). By way of example and not limitation, asuitable etchant for selectively etching an insulative material 130comprising silicon dioxide using a conventional reactive ion etchingprocess may comprise C_(x)H_(y)F_(z)/O₂/Ar in a 1:1:8 volumetric ratio,and where x=1, 4, or 6; y=0 through 4, and z=0 through 8. Examples mayinclude CH₄, CH₂F₂, C₄F₈, C₄F₆, C₆F₆, etc.

Similar to the embodiment described with relation to FIG. 5, the depthto which the insulative material 130 is recessed may be determinedaccording to the desired increase in the exposed surface area of thecontact end 135. The increase in surface area exposed is dependent onthe thickness between the top surface 161 and the bottom surface 163 (asoriented in FIG. 6) of the conductive traces 115 at the contact ends 135and the original diameter of the aperture 155. By way of example and notlimitation, and with reference to Table 3, in an embodiment in which theconductive traces 115 are approximately 500 nm thick and the originaldiameter of the aperture 155 is approximately 300 nm, a recesseddiameter D2 of 310 nm of the aperture 155 above and below a conductivetrace 115 results in a percent increase in total exposed contact area ofabout 4.1%. The percent increase in total contact area for thisembodiment is a result of the increase in horizontal contact area fromthe exposure of the top and bottom sides of the contact ends 135, sincethe vertical contact area remains the same from the diameter D1 at thecontact ends 135 remaining unchanged. In another example, a recesseddiameter D2 of 330 nm results in a percent increase of total exposedcontact area of about 12.6%, and a recessed diameter D2 of 350 nmresults in a percent increase of exposed total contact area of about21.7%. In comparison, and referring to Table 2 above, a change indiameter in the recess of a conventional integrated circuit device from300 nm to 350 nm results in a percent increase of total contact area ofapproximately 16.7%. By employing embodiments as described, a relativelysmall aperture may be employed in order to increase the IC density, andreduce the required size, of the integrated circuit, while stillproviding adequate exposed surface area at the contact ends 135.

TABLE 3 Thick- Vertical Horizontal Total Percent Dielectric Doped Siness of Contact Contact Contact Change Diameter Diameter Si layer areaarea area from (nm) (nm) (nm) (nm²) (nm²) (nm²) nominal 300 300 500471,239 0 471,239 310 300 500 471,239 9,582 490,403 4.1 330 300 500471,239 29,688 530,615 12.6 350 300 500 471,239 51,051 573,341 21.7

In a manner similar to that of the embodiment described with relation toFIG. 5, a conductive material may subsequently be disposed within theaperture 155. In some embodiments, the aperture 155 may be filled with aconductive material such as W, Cu, Al, Pd, Co, Ru, Ni, Pt, etc. Theconductive material may be disposed by conventional methods such aselectroless plating. Depending on the material composition of theconductive material (e.g., Cu), an optional seed layer may be formedprior to disposing the material in the aperture 155. The seed layer maybe disposed by conventional means, such as Atomic Layer Deposition (ALD)or electroless plating. Some non-limiting examples of suitable seedlayer material may include Cu, Ru, etc. Furthermore, for some conductivematerial (e.g., Cu), a barrier layer may also be formed in the aperture155 prior to forming the seed layer. Non-limiting examples of suitablebarrier film materials include TiN, TaN, etc. The barrier layer may beformed by disposing a suitable material by conventional methods, such asALD. In some embodiments, prior to disposing the conductive material inthe aperture 155, and prior to forming the optional barrier layer andseed layer, a silicide may be formed over the exposed contact ends 135.

By way of an example, and not limitation, in some embodiments in whichthe conductive traces 115 comprise a doped silicon, a silicide may beformed on the exposed contact ends 135 by disposing Ni thereon. The Nimay be disposed by conventional means, such as by ALD. The Ni may reactwith the silicon at temperatures lower than 400° C. to form NiSi_(x),which may improve conductive properties between the conductive materialin the aperture 155 and the conductive traces 115. If a conductivematerial such as Cu is being employed to fill the aperture 155, abarrier layer may be formed by ALD, followed by a seed layer. If theconductive material comprises another material such as Pd, theconductive material may be disposed within the aperture 155 without abarrier layer or a seed layer. The conductive material may be disposedby electroless deposition to fill the aperture 155 and electricallycouple the interconnect structure 120 to the exposed contact end 135.Top level common routing or conductive traces 125 (FIG. 2) may also beformed on the upper surface of the stacked IC device 100 andelectrically coupled to at least some of the interconnect structures120.

For the embodiments shown in FIGS. 5 and 6, the increased surface areaexposed at the contact ends 135 may reduce contact resistance betweenthe interconnect structures 120 and the conductive traces 115. Contactresistance is inversely proportional to the contact area. In otherwords, as the contact area increases, the contact resistance decreases.Furthermore, by adjusting the exposed surface area at the contact ends135, the designers are better able to achieve a desired contactresistance at each contact end 135 while maintaining smaller overalltransverse cross-sectional dimensions.

FIG. 7 shows a memory card containing a plurality of semiconductormemory devices containing a stack of IC layers and at least oneinterconnect structure according to one embodiment of the invention. Asubstrate 160, such as a printed circuit board (PCB), in accordance withan embodiment of the present invention, includes a plurality ofsemiconductor memory devices 165, at least one of which includes astacked memory device incorporating at least one embodiment of aninterconnect structure 120 as described herein. It should be understoodthat each semiconductor memory device 165 might comprise one of a widevariety of devices, including, by way of example and not limitation,Dynamic RAM (DRAM) devices, Static RAM (SRAM) devices, Flash memorydevices, as well as any other type of memory device.

As shown in FIG. 8, an electronic system 170, such as a computer system,in accordance with an embodiment of the present invention, comprises atleast one input device 175, at least one output device 180, at least oneprocessor 185, and at least one memory device 190. As used herein, theterm “computer system” includes not only computers such as personalcomputers and servers, but also wireless communications devices (e.g.,cell phones, personal digital assistants configured for text messagingand email), cameras, chip sets, set top boxes, controllers, vehicle andengine control and sensor systems, and other combinations of theabove-referenced input, output, processor and memory devices. The atleast one memory device 190 comprises at least one semiconductor memorydevice 165 comprising a stack of IC layers 105 incorporating at leastone of the interconnect structures 120 described herein according to anembodiment of the invention. As a non-limiting example, the at least onememory device 190 may comprise a module configured as a substrate 160bearing multiple semiconductor memory devices 165 as is illustrated inFIG. 7. It should be understood that the semiconductor memory devices165 may be selected from a wide variety of devices, including, by way ofnon-limiting examples, Dynamic RAM (DRAM) devices, Static RAM (SRAM)devices, Flash memory devices, or combinations thereof, etc.

CONCLUSION

Various embodiments of the present invention are described above anddirected toward embodiments of a semiconductor device comprising aplurality of integrated circuit layers having one or more interconnectstructures extending through at least some of the plurality of IClayers. In one embodiment at least one IC layer may comprise at leastone conductive trace and an insulative material adjacent at least aportion of the at least one conductive trace. At least one interconnectstructure may extend through a portion of at least one conductive traceand a portion of the insulative material. The at least one interconnectstructure comprises a transverse cross-sectional dimension through theat least one conductive trace, which differs from a transversecross-sectional dimension through the insulative material. In someembodiments, the transverse cross-sectional dimension of theinterconnect structure through the at least one conductive trace may besmaller than the transverse cross-sectional dimension through theinsulative material. In other embodiments, the transversecross-sectional dimension of the interconnect structure through the atleast one conductive trace may be larger than the transversecross-sectional dimension through the insulative material.

In another embodiment, a memory card comprises at least one memorydevice. The at least one memory device may comprise a plurality ofstacked integrated circuit layers comprising at least one conductivetrace, and in which at least some of the integrated circuit layerscomprise at least one memory array. At least one interconnect structuremay extend through a portion of the at least one conductive trace andmay comprise a transverse cross-sectional dimension through the at leastone conductive trace, which differs from a transverse cross-sectionaldimension of a sidewall of the at least one interconnect structure.

In still other embodiments, an electronic system comprises a processorand at least one memory device. The at least one memory device maycomprise a plurality of stacked integrated circuit layers comprising atleast one conductive trace, at least some of the integrated circuitlayers comprising at least one memory array. At least one interconnectstructure may extend through a portion of the at least one conductivetrace and comprises a transverse cross-sectional dimension through theat least one conductive trace, which differs from a transversecross-sectional dimension of a sidewall of the at least one interconnectstructure.

In yet another embodiment, a method of interconnecting a plurality ofintegrated circuit layers may comprise forming at least one aperturethrough a portion of at least one conductive trace and through a portionof at least one insulative material adjacent the at least one conductivetrace. The surface area of a contact end of the at least one conductivetrace may be increased, and the at least one aperture may be at leastpartially filled with a conductive material.

In another embodiment, a method of forming a memory device may comprisepositioning a plurality of integrated circuit layers in a stackedconfiguration. At least some integrated circuit layers of the pluralityof integrated circuit layers may comprise at least one memory array, aconnecting point and an insulative material adjacent the connectingpoint. At least one aperture may be formed through at least someintegrated circuit layers of the plurality of integrated circuit layers.The at least one aperture may comprise a first transversecross-sectional dimension through the connecting point and a second,different, transverse cross-sectional dimension through the insulativematerial. A conductive material may be disposed in at least a portion ofthe at least one aperture.

While certain embodiments have been described and shown in theaccompanying drawings, such embodiments are merely illustrative and notrestrictive of the scope of the invention, and this invention is notlimited to the specific constructions and arrangements shown anddescribed, since various other additions and modifications to, anddeletions from, the described embodiments will be apparent to one ofordinary skill in the art. Thus, the scope of the invention is onlylimited by the literal language, and equivalents, of the claims, whichfollow.

What is claimed is:
 1. A semiconductor device, comprising: at least oneintegrated circuit in communication with at least one conductive tracedisposed above an insulative material; at least one interconnectstructure extending through the at least one conductive trace andthrough the insulative material; and a silicide material laterallybetween a contact end of the at least one conductive trace and the atleast one interconnect structure, the at least one interconnectstructure comprising at least one conductive material, the at least oneconductive material comprising one conductive material extendingvertically through a transverse center of the at least one interconnectstructure, the one conductive material defining an extension or recesshaving a first transverse cross-sectional dimension through the at leastone conductive trace that differs from a second transversecross-sectional dimension of the one conductive material through theinsulative material, and where the one conductive material defines alesser transverse cross-sectional dimension of the first and the secondtransverse cross-sectional dimensions, one of the insulative material orthe contact end of the at least one conductive trace protruding into theone conductive material relative to another one of the insulativematerial or the contact end of the at least one conductive trace.
 2. Thesemiconductor device of claim 1, wherein the first transversecross-sectional dimension through the at least one conductive trace isless than the second transverse cross-sectional dimension of the oneconductive material through the insulative material.
 3. Thesemiconductor device of claim 1, wherein the first transversecross-sectional dimension through the at least one conductive trace isgreater than the second transverse cross-sectional dimension of the oneconductive material through the insulative material.
 4. Thesemiconductor device of claim 1, wherein the second transversecross-sectional dimension of the one conductive material through theinsulative material is less than or equal to about 500 nm.
 5. Thesemiconductor device of claim 1, wherein the first transversecross-sectional dimension through the at least one conductive tracediffers from the second transverse cross-sectional dimension of the oneconductive material through the insulative material by about 10 nm toabout 50 nm.
 6. The semiconductor device of claim 1, wherein the atleast one interconnect structure tapers through at least one of the atleast one conductive trace and the insulative material.
 7. Thesemiconductor device of claim 1, wherein the insulative materialcomprises a dielectric material selected from the group consisting ofsilicon dioxide (SiO₂), phosphosilicate glass (PSG), andborophosphosilicate glass (BPSG).
 8. A semiconductor device, comprising:at least one conductive trace disposed above an insulative material; atleast one integrated circuit in communication with the at least oneconductive trace; at least one interconnect structure extending throughthe at least one conductive trace and the insulative material, the atleast one interconnect structure comprising at least one conductivematerial, one conductive material thereof defining: a transversecross-sectional dimension through the at least one conductive trace; andanother transverse cross-sectional dimension through the insulativematerial different than the transverse cross-sectional dimension throughthe at least one conductive trace, a lesser of the transversecross-sectional dimension and the another transverse cross-sectionaldimension laterally adjacent an extension defined by the at least oneconductive trace or the insulative material, respectively, the oneconductive material disposed centrally to the transverse cross-sectionaldimension through the at least one conductive trace and the anothertransverse cross-sectional dimension through the insulative material;and a silicide material disposed laterally adjacent a contact end of theat least one conductive trace.
 9. The semiconductor device of claim 8,wherein the at least one interconnect structure extends through anentire height of the at least one conductive trace.
 10. Thesemiconductor device of claim 8, wherein the at least one interconnectstructure further comprises a sidewall traversing the contact end of theat least one conductive trace and another sidewall traversing a surfaceof the insulative material, wherein the sidewall defines the transversecross-sectional dimension through the at least one conductive trace andthe another sidewall defines the another transverse cross-sectionaldimension through the insulative material.
 11. The semiconductor deviceof claim 8, wherein the one conductive material is in direct contactwith the silicide material.
 12. A method of forming a semiconductordevice, comprising: disposing at least one conductive trace above aninsulative material and in communication with at least one integratedcircuit; forming at least one aperture extending through the at leastone conductive trace and through the insulative material, the at leastone aperture exposing a surface of the at least one conductive trace;forming at least one interconnect structure in the at least oneaperture, the at least one interconnect structure comprising aconductive material extending centrally through the aperture, theconductive material defining a first transverse cross-sectionaldimension through the at least one conductive trace that differs from asecond transverse cross-sectional dimension through the insulativematerial, the conductive material defining a lesser of the first and thesecond transverse cross-sectional dimensions laterally adjacent anextension defined by the at least one conductive trace or the insulativematerial, respectively; and before forming the at least one interconnectstructure, forming a silicide material on the surface of the at leastone conductive trace.
 13. The method of claim 12, wherein forming atleast one aperture extending through the at least one conductive traceand through the insulative material comprises forming the at least oneaperture extending entirely through the at least one conductive trace,traversing the surface of the at least one conductive trace, and throughthe insulative material.
 14. The method of claim 12, wherein forming atleast one interconnect structure in the at least one aperture comprisesforming the conductive material to fill the at least one aperture, theconductive material extending laterally past a sidewall of one of the atleast one conductive trace and the insulative material.
 15. The methodof claim 12, wherein forming at least one aperture comprises: forming aninitial aperture extending through the at least one conductive trace andthrough the insulative material; and expanding the initial aperture intothe at least one conductive trace to form the aperture and define thefirst transverse cross-sectional dimension through the at least oneconductive trace being greater than the second transversecross-sectional dimension through the insulative material.
 16. Themethod of claim 12, wherein forming at least one aperture comprises:forming an initial aperture extending through the at least oneconductive trace and through the insulative material; and expanding theinitial aperture into the insulative material to form the aperture anddefine the first transverse cross-sectional dimension through the atleast one conductive trace being less than the second transversecross-sectional dimension through the insulative material.
 17. Themethod of claim 12, wherein forming a silicide material on the surfaceof the at least one conductive trace comprises forming the silicidematerial in direct contact with the surface of the at least oneconductive trace.
 18. The method of claim 12, wherein forming at leastone aperture comprises forming the at least one aperture to taperthrough the insulative material.